Mosfet 8n60

  



Номер произв8N60
ОписаниеN-CHANNEL POWER MOSFET
ПроизводителиUnisonic Technologies
логотип

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8N60
POWER MOSFET
The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
„ FEATURES
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Avalanche energy specified
„ SYMBOL
„ ORDERING INFORMATION
Ordering Number
Halogen Free
8N60G-TA3-T
8N60G-TF1-T
8N60G-TF2-T
8N60G-TF3-T
8N60G-T2Q-T
Package
TO-220F1
TO-220F
Pin Assignment
GDS
GDS
GDS
Tube
Tube
Tube
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-115.G

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UNISONIC TECHNOLOGIES CO., LTD
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Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
SYMBOL
UNIT
Gate-Source Voltage
VGSS
±30 V
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
ID
EAS
dv/dt
8A
230 mJ
4.5 V/ns
147 W
TO-220F/TO-220F1
48 W
50 W
TJ
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 7.5A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
PARAMETER
TO-220/TO-262
TO-220F/TO-220F1
SYMBOL
θJC
62.5
2.6
UNIT
°C/W
°C/W
www.unisonic.com.tw
QW-R502-115.G

Всего страниц9 Pages
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8n60c

R code to convert json to csv download for mac. All Transistors Datasheet. Cross Reference Search. Transistor Database.

  1. 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is.
  2. This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STF18N60M2 Product summary.
  3. 8N60 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited: Part No. 8N60: Description isc N-Channel Mosfet Transistor: Download 2 Pages: Scroll/Zoom: 100%: Maker: ISC Inchange Semiconductor Company Limited.
  4. 8N60, datasheet for 8N60 - 8A, 600V N-CHANNEL POWER MOSFET provided by Unisonic Technologies. 8N60 pdf documentation and 8N60 application notes, selection guide.

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